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AOI452 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOI452 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.7 mΩ (VGS = 10V) RDS(ON) < 14.7 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested IPAK D GD S Top View Drain Connected to Tab G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C.

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