Datasheet Details
| Part number | AOK095A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 454.33 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK095A60-AlphaOmegaSemiconductors.pdf |
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Overview: AOK095A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOK095A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 454.33 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK095A60-AlphaOmegaSemiconductors.pdf |
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Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology 100% UIS Tested 100% Rg Tested 700V 152A < 0.095Ω 78nC 7.8mJ Top View D TO-247 Orderable Part Number AOK095A60 AOK095A60 S D G Package Type TO-247 Form Tube G S Minimum Order Quantity 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness ID IDM IAR EAR EAS dv/dt Diode reverse recovery dv/dt VDS=0 to 400V,IF<=20A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 38 24 152 11 60 480 100 20 500 378 3.0 -55 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Maximum 40 0.5 0.33 Units V V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Units °C/W °C/W °C/W Rev.2.0: January 2024 .aosmd.
Page 1 of 6 AOK095A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C ID=250μA, VGS=0V Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS
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