Datasheet Details
| Part number | AOK095A60FD |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.79 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK095A60FD-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOK095A60FD 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOK095A60FD |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.79 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK095A60FD-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PWM stages (LLC, PSFB,TTF) of Server, Tele, Industrial, UPS, and Solar Inverters 100% UIS Tested 100% Rg Tested Top View TO-247 700V 120A < 0.095Ω 83nC 8.1mJ D Orderable Part Number AOK095A60FD S D G Package Type TO247 Form Tube G S Minimum Order Quantity 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS MOSFET dv/dt ruggedness Peak diode reovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 30 20 120 11 60 480 100 20 245 2 -55 to 150 300 Units V V A A mJ mJ V/ns V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Maximum 40 0.5 0.51 Units °C/W °C/W °C/W Rev.1.0: November 2023 .aosmd.
Page 1 of 6 AOK095A60FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=10mA, VGS=0V, TJ=150°C ID=10mA, VGS=0V Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=5V, ID=250mA Static Dra
| Part Number | Description |
|---|---|
| AOK095A60 | 600V N-Channel Power Transistor |
| AOK031A60 | 600V N-Channel Power Transistor |
| AOK033V120X2Q | Power MOSFET |
| AOK040A60 | N-Channel Power Transistor |
| AOK060V65X2 | 650V Silicon Carbide Power MOSFET |
| AOK065A60FD | 600V N-Channel Power Transistor |
| AOK065V120X2 | Silicon Carbide Power MOSFET |
| AOK065V65X2 | Power MOSFET |
| AOK10B60D | IGBT |
| AOK10N90 | N-Channel MOSFET |