Datasheet Details
| Part number | AOKS30B60D1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 417.99 KB |
| Description | IGBT |
| Datasheet | AOKS30B60D1-AlphaOmegaSemiconductors.pdf |
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Overview: AOKS30B60D1 600V, 30A Alpha IGBT TM General.
| Part number | AOKS30B60D1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 417.99 KB |
| Description | IGBT |
| Datasheet | AOKS30B60D1-AlphaOmegaSemiconductors.pdf |
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• Latest Alpha IGBT (α IGBT) technology • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness Applications • Welding Machines • Motor Drives • UPS & Solar Inverters • Very High Switching Frequency Applications Top View TO-247 Product Summary VCE IC (TC=100°C) VCE(sat) (TC=25°C) 600V 30A 2.0V C AOKS30B60D1 E C G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE VGE Spike 500ns VSPIKE Continuous Collector TC=25°C Current TC=100°C IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ t SC 1.0s, TC=25°C Power Dissipation TC=25°C TC=100°C PD Junction and Storage Temperature Range T J , T STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case R θ JA R θ JC G E AOKS30B60D1 600 ±20 24 60 30 96 96 10 208 83 -55 to 150 300 AOKS30B60D1 40 0.6 Rev.1.0: May 2015 .aosmd.
Units V V V A A A µs W °C °C Units °C/W °C/W Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 600 - - V TJ=25°C - 2.0 2.5 V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=30A TJ=125°C - 2.4 - V TJ=150°C - 2.5 - V GE(th) I CES I GES Gate-Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter leakage current VCE=5V, IC=1mA VCE=600V, VGE=0V VCE=0V, VGE=±20V TJ=25°C TJ=125°C TJ=150°C - 5.6 - V - - 10 - - 400 µA - - 2000 - - ±100 nA g FS Forward T
| Part Number | Description |
|---|---|
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| AOK031A60 | 600V N-Channel Power Transistor |
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| AOK060V65X2 | 650V Silicon Carbide Power MOSFET |
| AOK065A60FD | 600V N-Channel Power Transistor |
| AOK065V120X2 | Silicon Carbide Power MOSFET |
| AOK065V65X2 | Power MOSFET |
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