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AOKS40B60D1 Datasheet IGBT

Manufacturer: Alpha & Omega Semiconductors

Overview: General.

General Description

• Latest Alpha IGBT (α IGBT) technology • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness Applications • Power factor correction • UPS & Solar Inverters • Very High Switching Frequency Applications • Welding Machines Top View TO-247 AOKS40B60D1 600V, 40A Alpha IGBT TM Product Summary VCE IC (TC=100°C) VCE(sat) (TC=25°C) 600V 40A 1.85V C AOKS40B60D1 E C G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE VGE Spike 500ns VSPIKE Continuous Collector TC=25°C Current TC=100°C IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=25°C TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case t SC PD T J , T STG TL Symbol R θ JA R θ JC G E AOKS40B60D1 600 ±20 24 80 40 140 140 10 278 111 -55 to 150 300 AOKS40B60D1 40 0.45 Rev.1.0: May 2015 .aosmd.

Units V V V A A A µs W °C °C Units °C/W °C/W Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) Collector-Emitter Saturation Voltage V GE(th) Gate-Emitter Threshold Voltage I CES Zero Gate Voltage Collector Current I GES Gate-Emitter leakage current g FS Forward Transconductance IC=1mA, VGE=0V, TJ=25°C TJ=25°C VGE=15V, IC=40A TJ=125°C TJ=150°C VCE=5V, IC=1mA TJ=25°C VCE=600V, VGE=0V TJ=125°C TJ=150°C VCE=0V, VGE=±20V VCE=20V, IC=40A 600 - - V - 1.85 2.4 - 2.2 - V - 2.3 - - 5.5 - V - - 10 -

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