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AOKS40B65H1 Datasheet IGBT

Manufacturer: Alpha & Omega Semiconductors

Overview: AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General.

General Description

• Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness Applications • Power factor correction • UPS & Solar Inverters • Very High Switching Frequency Applications • Welding Machines Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) TO-247 TO-220 650V 40A 1.9V C AOKS40B65H1 E C G E C G AOTS40B65H1 G E Orderable Part Number Package Type Form Minimum Order Quantity AOKS40B65H1 TO247 Tube 240 AOTS40B65H1 TO220 Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOKS40B65H1/AOTS40B65H1 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 80 A 40 Pulsed Collector Current, Limited by TJmax I CM 120 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 120 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 300V, TJ ≤ 175°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 300 150 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics 300 °C Parameter Symbol AOKS40B65H1/AOTS40B65H1 Units Maximum Junction-to-Ambient R θ JA 40 Maximum IGBT Junction-to-Case R θ JC 0.5 1) Allowed number of short circuits: <1000;

time between short circuits: >1s.

°C/W °C/W Rev.1.0: April 2015 .aosmd.

AOKS40B65H1 Distributor