AOL1202 Overview
Key Specifications
Mount Type: Surface Mount
Max Operating Temp: 175 °C
Min Operating Temp: -55 °C
Description
The AOL1202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching losses are minimized due to an extremely low combination of RDS(ON) and addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 54A < 4.2mΩ < 6mΩ UltraSO-8TM Top View Bottom View D D G S S G G S Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 54 42 200 16 13 38 72 58 29 2.1 1.3 -55 to 175 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 50 2.1 Max 25 60 2.6 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0 : December 2009 Page 1 of 6 AOL1202 Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 200 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3.5 4.2 mΩ 5.2 6.3 VGS=4.5V, ID=15A 4.8 6 mΩ gF.
