Datasheet Details
| Part number | AOLF66412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 350.60 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOLF66412-AlphaOmegaSemiconductors.pdf |
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Overview: AOLF66412 40V N-Channel AlphaSGT TM General.
| Part number | AOLF66412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 350.60 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOLF66412-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Wave solderable • Standard Vgsth Driving • Excellent Qg x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free pliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 40V 352A < 1.5mΩ < 2mΩ LFPAK5x6 Top View Bottom View D D PIN1 S S S G Orderable Part Number AOLF66412 D G S S PIN1 S Package Type LFPAK5x6 G S Form Minimum Order Quantity Tape & Reel 1500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VDS VGS ID IDM IDSM IAS EAS PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 352 248 1408 50 41 82 336 375 187 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.3 Max 20 50 0.4 Units °C/W °C/W °C/W Rev2.0: September 2024 .aosmd.
Page 1 of 6 AOLF66412 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum
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