Datasheet Details
| Part number | AON2392 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 321.01 KB |
| Description | 100V N-CHANNEL MOSFET |
| Datasheet | AON2392-AlphaOmegaSemiconductors.pdf |
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Overview: AON2392 100V N-Channel AlphaSGT TM General.
| Part number | AON2392 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 321.01 KB |
| Description | 100V N-CHANNEL MOSFET |
| Datasheet | AON2392-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic driven • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • Home Automation and IoT • VOIP applications DFN 2x2C Top View Bottom View 100V 8A < 32mΩ < 39mΩ D Pin 1 D S G Pin 1 G S Orderable Part Number AON2392 Package Type DFN2x2C Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 8 6 32 4.1 2.6 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 25 45 Max 30 55 Units °C/W °C/W Rev.1.0: January 2016 .aosmd.
Page 1 of 5 AON2392 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=8A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=8A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd Qoss tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=50V, ID=8A Gate Drain Charge Output Charge Tur
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AON2392 | N-Channel MOSFET | Kexin |
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