Datasheet Summary
AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS pliant -Halogen Free-
DFN 2x2 Package A NC D
Features
VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A
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