Datasheet Details
| Part number | AON3402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.81 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON3402_AlphaOmegaSemiconductors.pdf |
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Overview: AON3402 20V N-Channel MOSFET General.
| Part number | AON3402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 375.81 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON3402_AlphaOmegaSemiconductors.pdf |
|
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The AON3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application.
Product Summary VDS (V) = 20V ID = 12.6A (VGS = 4.5V) RDS(ON) < 13mW (VGS = 4.5V) RDS(ON) < 17mW (VGS = 2.5V) RDS(ON) < 26mW (VGS = 1.8V) ESD Rating: 2000V HBM 100% Rg Tested Top View DFN 3x3 Bottom View Top View S1 S2 S3 G4 8D 7D 6D G 5D Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 12.6 10 40 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RqJA 30 65 40 80 Maximum Junction-to-Lead C Steady-State RqJL 20 25 D S Units V V A W °C Units °C/W °C/W °C/W Rev.2.1: January 2024 .aosmd.
Page 1 of 4 AON3402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS BVGSO VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 20 Zero Gate Voltage Drain Current VDS=16V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±10V Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 Gate Threshold Voltage VDS=VGS ID=250mA 0.5 On state drain current VGS=4.5V, VDS=5V 40 VGS=4.5V, ID=12A Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=10.5A VGS=1.8V, ID=8.5A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss
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