Datasheet Details
| Part number | AON3414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 309.72 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON3414-AlphaOmegaSemiconductors.pdf |
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Overview: AON3414 30V N-Channel AlphaMOS General.
| Part number | AON3414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 309.72 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON3414-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free pliant Applications • System switch, inverter Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% Rg Tested 30V 10.5A < 17mΩ < 23mΩ HBM Class 2 DFN 3x3 Top View Bottom View D Top View Pin 1 Orderable Part Number AON3414 S S S G Package Type DFN 3x3 D D D D Form Tape & Reel G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 10.5 8 42 3.1 2 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 30 55 Maximum Junction-to-Lead Steady-State RθJL 20 Max 40 70 25 Units °C/W °C/W °C/W Rev.1.0 : June 2014 .aosmd.
Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 VGS=10V, ID=9A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=8A gFS Forward Transconductance VDS=5V, ID=9A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 0.5 SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge
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