Datasheet4U Logo Datasheet4U.com

AON3611 Datasheet 30v Complementary MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON3611 30V plementary MOSFET General.

General Description

The AON3611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The plementary MOSFETs may be used in inverter and other applications.

Product Summary N-channel VDS (V) = 30V ID = 5A RDS(ON) < 50mW RDS(ON) < 70mW P-channel VDS (V) = -30V ID = -6A RDS(ON) < 38mW RDS(ON) < 62mW (VGS = ±10V) (VGS = ±10V) (VGS = ±4.5V) D2 D1 DFN 3x3 Top View Bottom View Top View S2 D2 G2 D2 S1 D1 G1 D1 G2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C VGS ±20 5 ID 3.8 IDM 20 TA=25°C Power Dissipation B TA=70°C 2.1 PD 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 S2 N-channel S1 P-channel Max P-channel -30 ±20 -6 -4.7 -30 2.5 1.6 -55 to 150 Units V V A W °C Thermal Characteristics: N-channel Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 50 80 Maximum Junction-to-Lead Steady-State RqJL 48 Thermal Characteristics: P-channel Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 40 70 Maximum Junction-to-Lead Steady-State RqJL 38 Max Units 60 °C/W 98 °C/W 58 °C/W Max Units 50 °C/W 85 °C/W 46 °C/W Rev.3.1: January 2024 .aosmd.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AON3601 Field Effect Transistor
AON3402 20V N-Channel MOSFET
AON3406 30V N-Channel MOSFET
AON3408 N-Channel MOSFET
AON3414 30V N-Channel MOSFET
AON3702 N-Channel MOSFET
AON3806 Field Effect Transistor
AON3810 20V Dual N-Channel MOSFET
AON3812 Field Effect Transistor
AON3814 20V Dual N-Channel MOSFET

AON3611 Distributor