Download AON3806 Datasheet PDF
Alpha & Omega Semiconductors
AON3806
AON3806 is Field Effect Transistor manufactured by Alpha & Omega Semiconductors.
Description .. provide Features VDS (V) = 20V ID = 7.3 A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 4V) RDS(ON) < 32mΩ (VGS = 2.5V) ESD Rating: 2500V HBM The AON3806 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mondrain configuration. Standard Product AON3806is Pbfree (meets ROHS & Sony 259 specifications). AON3806L is a Green Product ordering option. AON3806 and AON3806L are electrically identical. DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A Maximum 20 ±12 7.3 5.8 30 2.2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 43 77 36 Max 56 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON3806 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250u A VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=7.3A Static Drain-Source On-Resistance TJ=125°C VGS=4V, ID=7.1A VGS=2.5V, ID=6.6A g FS VSD IS Forward Transconductance VDS=5V, ID=7.3A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current ±12 0.5 30 21 29 22 26 30 0.74 1 2.5 1390 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 150 1.5 15.4 VGS=4.5V, VDS=10V, ID=7.3A 1.4 4 6.2 VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω IF=7.3A, d I/dt=100A/µs 11 40.5 10 15 5.1 26 35...