Datasheet Details
| Part number | AON4605 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 419.10 KB |
| Description | 30V Complementary MOSFET |
| Datasheet | AON4605-AlphaOmegaSemiconductors.pdf |
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Overview: AON4605 30V plementary MOSFET General.
| Part number | AON4605 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 419.10 KB |
| Description | 30V Complementary MOSFET |
| Datasheet | AON4605-AlphaOmegaSemiconductors.pdf |
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The AON4605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Product Summary N-Channel VDS= 30V ID= 4.3A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 70mΩ (VGS=4.5V) P-Channel -30V -3.4A (VGS=-10V) RDS(ON) < 110mΩ (VGS=-10V) < 180mΩ (VGS=-4.5V) DFN 3x2A Top View Bottom View Top View D1 D2 Pin 1 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 S1 n-channel G2 S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C 4.3 -3.4 ID 3.4 -2.7 IDM 18 -13 TA=25°C Power Dissipation B TA=70°C 1.9 1.9 PD 1.2 1.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 51.5 82 40 Max 65 100 50 Units °C/W °C/W °C/W Rev 2: Feb.
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