AON4807 Datasheet | Alpha & Omega Semiconductors

Description The AON4807 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4A < 68mΩ < 105mΩ Top View DFN 3x2A Bottom View S1 G1 S2 G2 Pin 1 D1 Top View 1 2 3 4 8 7 6 5 D2 D1 D1 D2 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG http://..net/ Maximum -30 ±20 -4 -3 -18 1.9 1.2 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 51.5 82 37 Max 65 100 50 Units ° C/W ° C/W ° C/W Rev 1: July 2012 .aosmd. Page 1 of 5 datasheet pdf - http://..net/ Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4A RDS(ON) g FS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4A IS=-1A,VGS=0V TJ=125° C -1.3 -18 54 76 80 8 -0.78 -1 -2.5 290 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 40 16 5.8 VGS=-10V, VDS=-15V, ID=-4A http://..net/ Min -30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -1.8 -2.3 68 95 105 µA n A V A mΩ mΩ S V A p F p F p F Ω Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse...