AON5800 Datasheet Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AON5800 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	AON5800
Manufacturer	Alpha & Omega Semiconductors
File Size	164.06 KB
Description	Field Effect Transistor
Datasheet	AON5800_AlphaOmegaSemiconductors.pdf

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while ..

retaining a 12V VGS(MAX) rating.

It is ESD protected.

VDS (V) = 20V ID = 8 A (VGS = 10V) RDS(ON) < 16 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 21 mΩ (VGS = 4.0V) RDS(ON) < 22 mΩ (VGS = 3.1V) RDS(ON) < 27 mΩ (VGS = 2.5V) RDS(ON) < 45 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM S2 G2 D S1 G1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain ID Current RθJA=75°C/W TA=70°C Pulsed Drain Current C IDM TA=25°C Power Dissipation.

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