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AON5802 Datasheet Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AON5802 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

General Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional ..

Key Features

  • VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 17 mΩ (VGS = 10V) RDS(ON) < 20 mΩ (VGS = 4.5V) RDS(ON) < 22 mΩ (VGS = 4.0V) RDS(ON) < 24 mΩ (VGS = 3.1V) RDS(ON) < 30 mΩ (VGS = 2.5V) ESD Rating: 2000V HBM S2 G2 D S1 Top View G1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain . Current RθJA=75°C/W TA=70°C C Pulsed Drain Current Power Dissipation RθJA=75°C/W A Maximum 30 ±12 8 6 45 1.7.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AON5802B 30V Common-Drain Dual N-Channel MOSFET
AON5802BG 30V Dual N-Channel MOSFET
AON5800 Field Effect Transistor
AON5810 Dual N-Channel MOSFET
AON5820 20V Common-Drain Dual N-Channel MOSFET
AON1605 20V P-Channel MOSFET
AON1606 20V N-Channel MOSFET
AON1610 20V N-Channel MOSFET
AON1611 P-Channel MOSFET
AON1620 12V N-Channel MOSFET

AON5802 Distributor