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AON5810 Datasheet Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON5810 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

General Description

The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its mon-drain configuration.

Key Features

  • VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current RθJA=75° C/W Pulsed Drain Current B TA=25° C Power Dis.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AON5800 Field Effect Transistor
AON5802 Field Effect Transistor
AON5802B 30V Common-Drain Dual N-Channel MOSFET
AON5802BG 30V Dual N-Channel MOSFET
AON5820 20V Common-Drain Dual N-Channel MOSFET
AON1605 20V P-Channel MOSFET
AON1606 20V N-Channel MOSFET
AON1610 20V N-Channel MOSFET
AON1611 P-Channel MOSFET
AON1620 12V N-Channel MOSFET

AON5810 Distributor