Datasheet Details
| Part number | AON6413 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.73 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON6413-AlphaOmegaSemiconductors.pdf |
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Overview: AON6413 30V P-Channel MOSFET General.
| Part number | AON6413 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.73 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON6413-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Application • System/Load Switch, Battery Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -32A < 8.5mΩ < 17mΩ HBM Class 2 DFN5X6 Top View Bottom View Top View D PIN1 1 2 3 4 PPinIN11 8 7 6 G 5 S Orderable Part Number AON6413 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -32 -25 -128 -22 -17 -40 80 -36 48 19 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 2.1 Max 20 50 2.6 Units °C/W °C/W °C/W Rev.2.0: July 2017 .aosmd.
Page 1 of 6 AON6413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.6 VGS=-10V, ID=-16A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-10A gFS Forward Transconductance VDS=-5V, ID=-16A VSD Diode Forward Voltage
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