Datasheet Details
| Part number | AON6414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 152.90 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6414-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AON6414 30V N-Channel MOSFET General.
| Part number | AON6414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 152.90 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6414-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AON6414 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 10.5mΩ < 17mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 28 120 11 9 30 135 36 14 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 2.6 Max 30 64 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 4: March 2011 .aosmd.
| Part Number | Description |
|---|---|
| AON6414A | 30V N-Channel MOSFET |
| AON6410 | N-Channel MOSFET |
| AON6411 | 20V P-Channel MOSFET |
| AON6413 | 30V P-Channel MOSFET |
| AON6416 | N-Channel MOSFET |
| AON6418 | N-Channel MOSFET |
| AON6400 | N-Channel MOSFET |
| AON6403 | 30V P-Channel MOSFET |
| AON6403L | N-Channel MOSFET |
| AON6404 | N-Channel MOSFET |