Datasheet Details
| Part number | AON6760 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 309.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6760-AlphaOmegaSemiconductors.pdf |
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Overview: AON6760 30V N-Channel AlphaMOS General.
| Part number | AON6760 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 309.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6760-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Application • DC/DC Converters in puting, Servers, and POL • Isolated DC/DC Converters in Tele and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 36A < 3.9mΩ < 4.9mΩ Top View DFN 5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Orderable Part Number AON6760 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 36 28 140 28 22 60 18 36 39 15 5 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 20 45 Maximum Junction-to-Case Steady-State RθJC 2.6 Max 25 55 3.2 Units °C/W °C/W °C/W Rev.1.0: November 2013 .aosmd.
Page 1 of 6 AON6760 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 VGS=10V, ID=20A RDS(ON) Static Drain
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