Datasheet Details
| Part number | AON7414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 711.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7414-AlphaOmegaSemiconductors.pdf |
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Overview: AON7414 30V N-Channel MOSFET General.
| Part number | AON7414 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 711.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7414-AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AON7414 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 20A < 15mΩ < 20mΩ DFN 3x3A Top View Bottom View Top View Pin 1 Pin 1 1 8 2 7 3 6 4 5 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C G TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 20 15 55 12.5 10 17 14 36 15.5 6 4.1 2.6 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 24 47 Maximum Junction-to-Case Steady-State RθJC 6.6 Max 30 60 8 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: September 2013 .aosmd.
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