Datasheet Details
| Part number | AONP36336 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 960.44 KB |
| Description | Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP36336-AlphaOmegaSemiconductors.pdf |
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Overview: AONP36336 30V Dual Asymmetric N-Channel MOSFET General.
| Part number | AONP36336 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 960.44 KB |
| Description | Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP36336-AlphaOmegaSemiconductors.pdf |
|
|
|
• Bottom source technology • Very Low RDS(ON) at Vgs 4.5V • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 50A 50A < 4.7mΩ < 5.8mΩ < 5.7mΩ < 7.3mΩ Applications • Buck-boost Converters in puting • Point of Load Converter • See Note I 100% UIS Tested 100% Rg Tested DFN3.3x3.3B Top View Q1 Bottom View Pin 1 Q2 Pin 1 Orderable Part Number AONP36336 Package Type DFN3.3x3.3B Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±12 Continuous Drain Current G TC=25°C TC=100°C ID 50 42 Pulsed Drain Current C IDM 110 Continuous Drain Current TA=25°C TA=70°C 21 IDSM 17 Avalanche Current C IAS 60 Avalanche energy L=0.01mH C EAS 18 TC=25°C Power Dissipation B TC=100°C 33 PD 13 ±12 50 35.5 88 18 14.5 45 10 30 12 TA=25°C Power Dissipation A TA=70°C 3.4 3.1 PDSM 2.2 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 30 33 36 40 52 55 63 66 3 3.3 3.8 4.2 Units °C/W °C/W °C/W Rev.2.0: December 2021 .aosmd.
Page 1 of 10 AONP36336 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Res
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