Datasheet Details
| Part number | AONP38324U |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 747.98 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP38324U-AlphaOmegaSemiconductors.pdf |
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Overview: AONP38324U 30V Dual Asymmetric N-Channel MOSFET General.
| Part number | AONP38324U |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 747.98 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP38324U-AlphaOmegaSemiconductors.pdf |
|
|
|
• Bottom source technology • Very Low RDS(ON) at Vgs 4.5V • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free pliant Applications • Buck-boost Converters in puting • Point of Load Converter Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 155A 118A < 2.4mΩ < 2.3mΩ < 3mΩ < 2.9mΩ 100% UIS Tested 100% Rg Tested DFN3.3x3.3D Top View Bottom View Q2 Pin 1 Orderable Part Number AONP38324U Q1 Pin 1 Package Type DFN3.3x3.3D Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±12 ±12 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C 155 118 ID 97 75 IDM 620 472 Continuous Drain Current TA=25°C TA=70°C 29 29 IDSM 23 23 Avalanche Current C IAS 60 55 Avalanche energy L=0.01mH C EAS 18 15 TC=25°C Power Dissipation B TC=100°C 89 PD 35 50 20 TA=25°C Power Dissipation A TA=70°C 3.2 3.2 PDSM 2 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 32 32 39 39 58 58 73 73 1.1 2 1.4 2.5 Units °C/W °C/W °C/W Rev.1.0: June 2024 .aosmd.
Page 1 of 10 AONP38324U Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance
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