Datasheet Details
| Part number | AONR21305C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 477.77 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONR21305C-AlphaOmegaSemiconductors.pdf |
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Overview: AONR21305C 30V P-Channel MOSFET General.
| Part number | AONR21305C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 477.77 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONR21305C-AlphaOmegaSemiconductors.pdf |
|
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|
• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free pliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -34A < 6.5mΩ < 9.8mΩ DFN 3x3_EP Top View Bottom View Pin 1 PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D D G S Orderable Part Number AONR21305C Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -34 -34 -210 -22 -18 -44 97 42 16 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 2.4 Max 25 55 3 Units °C/W °C/W °C/W Rev.2.0: January 2020 .aosmd.
Page 1 of 6 AONR21305C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.3 VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Curren
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