Datasheet Details
| Part number | AONR21357 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 369.20 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONR21357-AlphaOmegaSemiconductors.pdf |
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Overview: AONR21357 30V P-Channel MOSFET General.
| Part number | AONR21357 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 369.20 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONR21357-AlphaOmegaSemiconductors.pdf |
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• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free pliant Applications • Notebook AC-in load switch • Battery protection charge/discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -34A < 7.8mΩ < 12.3mΩ DFN 3x3_EP Top View Bottom View Top View D Pin 1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONR21357 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -34 -32.5 -136 -21 -17 39 76 30 12 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 20 Maximum Junction-to-Ambient A D Steady-State RqJA 45 Maximum Junction-to-Case Steady-State RqJC 3.5 Max 25 55 4.2 Units °C/W °C/W °C/W Rev.2.1: November 2023 .aosmd.
Page 1 of 6 AONR21357 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=-250mA -1.3 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-16A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Curre
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