Datasheet Details
| Part number | AONR62818 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.43 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AONR62818-AlphaOmegaSemiconductors.pdf |
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Overview: AONR62818 80V N-Channel AlphaSGT TM General.
| Part number | AONR62818 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 308.43 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AONR62818-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET - AlphaSGTTM technology • Best in Class Low RDS(ON) • Low Switching Loss • Logic Level Gate Drive • RoHS and Halogen-Free pliant Applications • Synchronous Rectification • High Frequency DC/DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 80V 50A < 6.6mΩ < 9.5mΩ DFN 3.3x3.3 EP Top View Bottom View Top View D PIN 1 S1 S2 S3 G4 8D 7D 6D 5D G S PIN 1 Orderable Part Number AONR62818 Package Type DFN 3.3x3.3 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VGS ID IDM IDSM IAS EAS PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 50 41 175 18 14 42 88 54 21.5 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 25 50 Maximum Junction-to-Case Steady-State RqJC 1.8 Max 30 60 2.3 Units °C/W °C/W °C/W Rev.2.0: September 2019 .aosmd.
Page 1 of 6 AONR62818 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=18A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maxim
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