Datasheet Details
| Part number | AONS66524 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 589.59 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AONS66524-AlphaOmegaSemiconductors.pdf |
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Overview: AONS66524 150V N-Channel AlphaSGT TM General.
| Part number | AONS66524 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 589.59 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AONS66524-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized Switching Performance • RoHS 2.0 and Halogen-Free pliant Application • Industrial Power Supply • Solar Inverter Product Summary VDS ID (at VGS=20V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested 150V 56A < 16mΩ < 18mΩ DFN5x6 Top View Bottom View Top View D PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS66524 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 56 36 97 13 10 48 115 119 48 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.87 Max 20 50 1.05 Units °C/W °C/W °C/W Rev.1.0: November 2021 .aosmd.
Page 1 of 6 AONS66524 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 150 Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Inp
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