Datasheet Details
| Part number | AONS66617 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 447.82 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AONS66617-AlphaOmegaSemiconductors.pdf |
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Overview: AONS66617 60V N-Channel AlphaSGT TM General.
| Part number | AONS66617 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 447.82 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AONS66617-AlphaOmegaSemiconductors.pdf |
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• AlphaSGTTM N-Channel Power MOSFET • MSL1 Rated 260°C reflow • 175°C Junction temperature • Enhanced Body Diode performacne • RoHS 2.0 and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 110A < 4.7mΩ < 7mΩ Applications • Motor Driver • Battery Management Systems (BMS) • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested Max Tj=175°C DFN5X6 D Top View Bottom View Top View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS66617 Package Type DFN 5X6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 110 78 180 28 23 24 86 120 60 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1 Max 20 50 1.25 Units °C/W °C/W °C/W Rev.1.0: Feburary 2024 .aosmd.
Page 1 of 6 AONS66617 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.2 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A
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