Datasheet Details
| Part number | AOSP32314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 302.78 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOSP32314-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP32314 30V N-Channel MOSFET General.
| Part number | AOSP32314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 302.78 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOSP32314-AlphaOmegaSemiconductors.pdf |
|
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• Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 14.5A < 9mΩ < 12.6mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View G S S S Orderable Part Number AOSP32314 Package Type SO-8 Top View 1 8 2 7 3 6 4 5 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 14.5 11.5 58 33 27 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: July 2017 .aosmd.
Page 1 of 5 AOSP32314 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA VGS=10V, ID=14.5A Static Drain-Source On-Resistance VGS=4.5V, ID=12A Forward Transconductance VDS=5V, ID=14.5A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MH
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