Datasheet Details
| Part number | AOSP62530 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 541.17 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOSP62530-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP62530 150V N-Channel AlphaSGT TM General.
| Part number | AOSP62530 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 541.17 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOSP62530-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge Applications • Primary Switch for 48V systems Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 150V 5A < 63mΩ < 70mΩ SOIC-8 Top View Bottom View D D D D D G S S S PIN1 Orderable Part Number Package Type AOSP62530 SO-8 PIN1 Form Tape & Reel G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 5 3.8 20 14 29 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: February 2021 .aosmd.
Page 1 of 5 AOSP62530 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.7 VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=75V, f=1MHz f=1MHz 1.5 SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off)
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