Datasheet Details
| Part number | AOSP66406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 377.38 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOSP66406-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP66406 40V N-Channel AlphaSGT TM General.
| Part number | AOSP66406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 377.38 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOSP66406-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 17A < 6.6mΩ < 10mΩ Applications • High Frequency Switching and Synchronous Rectification • DC-Motor Driver 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S Orderable Part Number AOSP66406 Package Type SO-8 G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 17 13 68 20 60 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: October 2017 .aosmd.
Page 1 of 5 AOSP66406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 VGS=10V, ID=17A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=14A gFS Forward Transconductance VDS=5V, ID=17A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gat
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