Datasheet Details
| Part number | AOSS21115C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 291.10 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AOSS21115C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSS21115C 20V P-Channel MOSFET General.
| Part number | AOSS21115C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 291.10 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AOSS21115C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free pliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection -20V -4.5A < 40mΩ < 55mΩ < 72mΩ HBM Class 2 SOT23 Top View Bottom View D D D S G Orderable Part Number AOSS21115C G S Package Type SOT23-3 G Form Tape & Reel S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -4.5 -3.5 -18 1.3 0.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units °C/W °C/W °C/W Rev.1.0: March 2019 .aosmd.
Page 1 of 5 AOSS21115C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-20V, VGS=0V IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±8V VDS=VGS, ID=-250mA VGS=-4.5V, ID=-4.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-3.5A Forward Transconductance VDS=-5V, ID=-4.5A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
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