Datasheet Details
| Part number | AOSS21319C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.11 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSS21319C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSS21319C 30V P-Channel MOSFET General.
| Part number | AOSS21319C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.11 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSS21319C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free pliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) ESD protection -30V -2.8A < 100mΩ < 150mΩ SOT23 Top View Bottom View D D G S G S Orderable Part Number AOSS21319C Package Type SOT23-3 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -2.8 -2.1 -10 1.3 0.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units °C/W °C/W °C/W Rev.1.0: August 2019 .aosmd.
Page 1 of 5 AOSS21319C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 μA -5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±10 μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 -1.7 -2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.8A TJ=125°C 70 100 mΩ 102 145 VGS=-4.5V, ID=-2.4A 103 150 mΩ gFS Forward Transconductance VDS=-5V, ID=-2.8A 8 S VSD Diode Forward Voltage IS=-1A, VGS=0V -0.8 -1 V IS Maximum Body-Diode Continuous Current -2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz 320
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