Datasheet Details
| Part number | AOSS62934 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 350.58 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOSS62934-AlphaOmegaSemiconductors.pdf |
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Overview: AOSS62934 100V N-Channel AlphaSGT TM General.
| Part number | AOSS62934 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 350.58 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOSS62934-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 2A < 140mΩ < 180mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Tele and Industrial SOT23 Top View Bottom View D D D S G G S G S Orderable Part Number AOSS62934 Package Type SOT23 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 2.0 1.5 8 1.4 0.9 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Rev.1.0: September 2018 .aosmd.
Page 1 of 5 AOSS62934 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=2A Static Drain-Source On-Resistance VGS=4.5V, ID=1A Forward Transconductance VDS=5V, ID=2A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd Qoss tD(on) tr tD
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