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AOT12N50 Datasheet 12a N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General.

General Description

Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 600V@150℃ 12A < 0.52W D G AOT12N50 DS G AOTF12N50 G DS S AOB12N50 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N50/AOB12N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 12 8.4 Pulsed Drain Current C IDM 48 Avalanche Current C IAR 5.5 Repetitive avalanche energy C EAR 454 Single plused avalanche energy G EAS 908 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 40 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 AOTF12N50 12* 8.4* 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.

AOT12N50/AOB12N50 65 0.5 0.5 AOTF12N50 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 9.1: April 2024 .aosmd.

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