Datasheet Details
| Part number | AOT1N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 357.99 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet | AOT1N60_AlphaOmegaSemiconductors.pdf |
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Overview: AOT1N60 600V,1.3A N-Channel MOSFET General.
| Part number | AOT1N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 357.99 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet | AOT1N60_AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 1.3A < 9W Top View TO-220 D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 1.3 0.9 Pulsed Drain Current C IDM 4 Avalanche Current C IAR 1 Repetitive avalanche energy C EAR 15 Single plused avalanche energy G EAS 30 Peak diode recovery dv/dt dv/dt 5 TC=25°C Power Dissipation B Derate above 25oC PD 41.7 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Typical 55 - Maximum 65 0.5 Maximum Junction-to-Case RqJC 2 3 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 5.1: April 2024 .aosmd.
Page 1 of 5 AOT1N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A gFS Forward Transconductance
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOT1N60 | N-Channel MOSFET | INCHANGE |
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