AOT1N60 Datasheet (Inchange Semiconductor)

Part AOT1N60
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 257.08 KB
Pricing from 1.28 USD, available from DigiKey and TME.
Inchange Semiconductor

AOT1N60 Overview

Key Specifications

Package: TO-220-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 1.3 A IDM Drain Current-Single Pluse 4 A PD Total Dissipation @TC=25℃ 41.7 W TJ Max.

Key Features

  • Drain Current –ID=1.3A@ TC=25℃
  • Drain Source Voltage- : VDSS=600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 9.0Ω(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Price & Availability

Seller Inventory Price Breaks Buy
DigiKey 290 1+ : 1.28 USD
50+ : 0.5954 USD
100+ : 0.5282 USD
500+ : 0.41018 USD
View Offer
TME 222 1+ : 0.643 EUR
10+ : 0.54 EUR
50+ : 0.486 EUR
100+ : 0.429 EUR
View Offer