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AOT5B65M1 Datasheet IGBT

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT5B65M1/AOB5B65M1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode.

General Description

• Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Home appliance applications such as refrigerators and washing machines • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220 TO-263 D2PAK C Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 5A 1.57V C AOT5B65M1 E C G E G AOB5B65M1 G E Orderable Part Number Package Type Form Minimum Order Quantity AOT5B65M1 TO220 Tube AOB5B65M1 TO263 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT5B65M1/AOB5B65M1 1000 800 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 10 A 5 Pulsed Collector Current, Limited by TJmax I CM 15 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 15 A Continuous Diode Forward Current TC=25°C TC=100°C IF 10 A 5 Diode Pulsed Current, Limited by TJmax I FM 15 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 400V, TJ ≤ 175°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 83 42 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics 300 °C Parameter Symbol AOT5B65M1/AOB5B65M1 Units Maximum Junction-to-Ambient R θ JA 65 Maximum IGBT Junction-to-Case R θ JC 1.8 Maximum Diode Junction-to-Case R θ JC 4.7 1) Allowed number of short circuits: <1000;

time between short circuits: >1s.

°C/W °C/W °C/W Rev.1.0: April 2015 .aosmd.

AOT5B65M1 Distributor