Datasheet Summary
.. AOT10N60
/ AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608
General Description
The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 700V @ 150°C ID = 10A RDS(ON) < 0.75 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
G G D G S D S S
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