Datasheet Details
| Part number | AOTE21115C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.02 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AOTE21115C-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AOTE21115C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.02 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AOTE21115C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free pliant Applications • This device is ideal for Load Switch AOTE21115C 20V P-Channel MOSFET Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection -20V -4.9A < 44mΩ < 57mΩ < 77mΩ HBM Class 2 TSSOP8 D1 D2 Top View Bottom View TSSOP-8 Top View D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G1 6 S2 5 G2 G2 S1 S2 Orderable Part Number AOTE21115C Package Type TSSOP-8 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -4.9 -3.7 -20 1.5 0.9 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 64 115 Maximum Junction-to-Lead Steady-State RqJL 70 Max 83 140 85 Units °C/W °C/W °C/W Rev.3.1: May 2024 .aosmd.
Page 1 of 5 AOTE21115C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=-250mA, VGS=0V VDS=-20V, VGS=0V VDS=0V, VGS=±8V VDS=VGS, ID=-250mA VGS=-4.5V, ID=-4.9A TJ=55°C RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-2.5V, ID=-4.4A VGS=-1.8V, ID=-3.8A Forward Transconductance VDS=-5V, ID=-4.9A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz f=1MH
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