Datasheet Details
| Part number | AOTF12T50P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 447.65 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF12T50P-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF12T50P 500V,12A N-Channel MOSFET General.
| Part number | AOTF12T50P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 447.65 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF12T50P-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free pliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Tele 100% UIS Tested 100% Rg Tested TO-220F 600V 48A < 0.5Ω 22nC 4µJ D AOTF12T50P GDS G S Orderable Part Number AOTF12T50P AOTF12T50PL Package Type TO-220F Pb Free TO-220F Green Form Tube Tube Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF12T50P AOTF12T50PL Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 12* 8* Pulsed Drain Current C IDM 48 Avalanche Current C L=1mH IAR 12 Repetitive avalanche energy C EAR 72 Single pulsed avalanche energy G EAS 480 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 43 0.3 33 0.26 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V A A mJ mJ V/ns W °C °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
AOTF12T50P 65 2.9 AOTF12T50PL 65 3.8 Units °C/W °C/W Rev.2.0: September 2014 .aosmd.
Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 500 BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF12T50PL | N-Channel MOSFET | INCHANGE |
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