AOTF12T50PL Datasheet (Inchange Semiconductor)

Part AOTF12T50PL
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 247.18 KB
Pricing from 0.8085 USD, available from Win Source and Worldway Electronics.
Inchange Semiconductor

AOTF12T50PL Overview

Key Specifications

Package: TO-220-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C

Description

General Lighting for LED and CCFL - AC/DC Power supplies SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 33 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER Rth j-c MAX UNIT 3.8 ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOTF12T50PL TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 5V; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VDS= 400V; VGS= 0@TJ=125℃ VSD Forward On-Voltage IS= 1A; VGS= 0 MIN MAX UNIT 500 V 3 5 V 0.5 Ω ±100 nA 1 μA 1 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

Key Features

  • Drain Current –ID=12A@ TC=25℃
  • Drain Source Voltage- : VDSS=500V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Price & Availability

Seller Inventory Price Breaks Buy
Win Source 3970 75+ : 0.8085 USD
175+ : 0.663 USD
270+ : 0.6433 USD
375+ : 0.6225 USD
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Worldway Electronics 19629 7+ : 0.2388 USD
10+ : 0.234 USD
100+ : 0.2268 USD
500+ : 0.2197 USD
View Offer