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AOTF474 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor ..

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control.

With low R DS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.

AOT(F)474/AOT(F)474L are electrically Identical AOT(F)474 -RoHS pliant AOT(F)474L -Halogen Free Product Summary VDS ID_TO220 (at V GS=10V) ID_TO220FL (at VGS=10V) RDS(ON) (at VGS=10V) 75V 127A 47A < 11.3mΩ 100% UIS Tested Top View D TO220 Bottom View Top View TO220FL Bottom View D S G D S G D G D S S D G G S AOT474 AOTF474 AOTF474 75 ±25 127 89 200 9 7 106 562 417 208 1.9 1.2 -55 to 175 57.5 29 1.9 1.2 9 7 A A mJ W W °C 47 33 A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted AOT474 Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C C VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol A AD t ≤ 10s Steady-State Steady-State RθJA RθJC AOT474 13.9 65 0.36 AOTF474 13.9 65 2.6 Units °C/W °C/W °C/W Rev 0: February 2009 .aosmd.

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