Datasheet4U Logo Datasheet4U.com

AOTF470 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOTF470 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

-RoHs pliant

Key Features

  • VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON) < 11.5mΩ (VGS = 10V) D G DS AOTF470 TO-220F G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter M.

AOTF470 Distributor