Datasheet Details
| Part number | AOTF8N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 384.69 KB |
| Description | 9A N-Channel MOSFET |
| Datasheet | AOTF8N50 AOT8N50 Datasheet (PDF) |
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Overview: AOT8N50/AOTF8N50 500V, 9A N-Channel MOSFET General.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AOTF8N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 384.69 KB |
| Description | 9A N-Channel MOSFET |
| Datasheet | AOTF8N50 AOT8N50 Datasheet (PDF) |
|
|
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Product Summary The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 9A < 0.85W D G D S G DS G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT8N50 AOTF8N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 9 9* 6 6* 30 3.2 154 307 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.5 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT8N50 65 0.5 AOTF8N50 65 -- Maximum Junction-to-Case RqJC 0.65 3.25 * Drain current limited by maximum junction temperature.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOTF8N50 | N-Channel MOSFET | INCHANGE |
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