Datasheet4U Logo Datasheet4U.com

AOTF8N50 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 8A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOTF8N50 9A N-Channel MOSFET Alpha & Omega Semiconductors
AOTF8N60 8A N-Channel MOSFET Alpha & Omega Semiconductors
AOTF8N65 8A N-Channel MOSFET Alpha & Omega Semiconductors
AOTF8N80 7.4A N-Channel MOSFET Alpha & Omega Semiconductors
AOTF8T50P 8A N-Channel MOSFET Alpha & Omega Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number Description
AOTF8N60 N-Channel MOSFET
AOTF8N65 N-Channel MOSFET
AOTF8N80 N-Channel MOSFET
AOTF8T50P N-Channel MOSFET
AOTF10N50FD N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor AOTF8N50 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 38.5 W TJ Max.