Datasheet Details
| Part number | AOTS21115C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.97 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AOTS21115C-AlphaOmegaSemiconductors.pdf |
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Overview: AOTS21115C 20V P-Channel MOSFET General.
| Part number | AOTS21115C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.97 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AOTS21115C-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free pliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection -20V -6.6A < 40mΩ < 55mΩ < 72mΩ HBM Class 2 TSOP6 Top View Bottom View Top View D Pin1 D1 6D D2 5D G G3 4S S Orderable Part Number AOTS21115C Package Type TSOP-6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -6.6 -5.1 -26 2.5 1.6 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 42 68 Maximum Junction-to-Lead Steady-State RqJL 23 Max 50 85 30 Units °C/W °C/W °C/W Rev.2.0: August 2019 .aosmd.
Page 1 of 5 AOTS21115C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-20V, VGS=0V IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±8V VDS=VGS, ID=-250mA VGS=-4.5V, ID=-6.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-2.5V, ID=-5.6A VGS=-1.8V, ID=-4.9A Forward Transconductance VDS=-5V, ID=-6.6A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Qgs Qgd
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