AOU438 Datasheet | Alpha & Omega Semiconductors

Description The AOU438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU438 is Pb-free (meets ROHS & Sony 259 specifications). AOU438L is a Green Product ordering option. AOU438 and AOU438L are electrically identical . Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation Maximum 30 ±20 85 63 200 30 112 100 50 -55 to 175 Units V V A A m J W °C TC=25°C TC=100°C B ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient C Maximum Junction-to-Case Steady-State Steady-State Symbol RθJA RθJC Typ 0.8 Max 100 1.5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A VDS=5V, ID=20A Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 1 5 100 1 85 3.5 5.4 5.4 106 0.72 1 85 3200 3840 4.5 6.5 6.5 1.8...